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(R)
STTA106/U
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 1A 600V 20ns 1.5V
FEATURES AND BENEFITS
s
s
s
s
SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS
SMB STTA106U
DO-15 STTA106
DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT and MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tj Tstg Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current tp = 5 s F = 5kHz square tp = 10 ms sinusoidal Value 600 6 10 25 125 - 65 to + 150 Unit V A A A C C control freewheel applications and in booster diode applications in power factor control circuitries. Available either in SMB or DO-15 axial package, these 600V devices are particularly intended for use on 240V domestic mains.
Maximum operating junction temperature Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
February 2001 - Ed: 5D
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STTA106/U
THERMAL AND POWER DATA Symbol Rth(j-I) P1 Parameter Junction to lead Junction to lead L=5mm Conduction power dissipation IF(AV) = 0.8A = 0.5 Tlead= 93C IF(AV) = 0.8A = 0.5 Tlead= 60C Pmax Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 90C Tlead= 60C Test conditions SMB DO-15 SMB DO-15 SMB DO-15 Value 23 45 1.4 1.4 1.5 1.5 Unit C/W C/W W W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF
*
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
Test conditions IF = 1A VR = 0.8 x VRRM Ip < 3.IF(AV) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.1 250
Max 1.75 1.5 10 750 1.15 350
Unit V A V m
IR ** Vto Rd
Test pulse :
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR = 30V Tj = 125C VR = 400V dIF/dt = -8 A/s dIF/dt = -50 A/s Tj = 125C VR = 400V dIF/dt = -50 A/s IF = 1A 0.6 1.6 IF =1A 1.1 / Min Typ 20 50 A Max Unit ns
IRM
Maximum recovery current Softness factor
S factor
TURN-ON SWITCHING Symbol tfr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 1 A, dIF/dt = 8 A/s measured at 1.1 x VF max Min Typ Max 500 10 Unit ns V
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STTA106/U
Fig. 2: Forward voltage drop versus forward current (maximum values).
Fig. 1: Conduction losses versus average current.
P1(W)
1.8 = 0.2 = 0.5 = 0.1 1.6 = 0.05 1.4 1.2 =1 1.0 0.8 0.6 0.4 0.2 IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
IFM(A) 1E+1
1E+0
Tj=125C Tj=25C
1E-1 VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 3: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 8 7 6 5 4 3 2 1 0 0 50 dIF/dt(A/s) 100 150 200
IF=IF(av)
Fig. 4: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 225 200 175 150 125 100 75 50 25 0
VR=400V Tj=125C
VR=400V Tj=125C
IF=2*IF(av)
IF=2*IF(av) IF=IF(av)
0
20
40
60
dIF/dt(A/s) 80 100 120 140 160 180 200
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical values).
Fig. 6: Relative variation of dynamic parameters versus junction temperature (reference Tj = 125C). (Reference: Tj=125C)
1.1
S factor 1.6 1.4 1.2 1.0
IF=2*IF(av) VR=400V Tj=125C
1.0
S factor
0.9
IRM
0.8
0.8 0.6 0 10 20 30
dIF/dt(A/s) 40 50 60
Tj(C)
70 80 90 100
0.7 25
50
75
100
125
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Fig. 7: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 40 35 30 25 20 15 10 5 0 0 20 40 60
IF=2A Tj=125C
Fig. 8: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 550 500 450 400 350 300 250 200 150 100 50 0
IF=2A VFR=1.1*VF max. Tj=125C
dIF/dt(A/s)
80 100 120 140 160 180 200
dIF/dt(A/s)
0 20 40 60 80 100 120 140 160 180 200
Fig. 9: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 10
F=1MHz
5
2 VR(V) 1 1 10 100 200
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STTA106/U
APPLICATION DATA The TURBOSWITCHTM is especially designed to provide the lowest overall power losses in any "Freewhell Mode" application (see fig. A) considering both diode and companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the transistor due to the diode
Fig. A : "FREEWHEEL" MODE
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
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APPLICATION DATA (Cont'd) Fig. B : STATIC CHARACTERISTICS
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vto x IF(AV) + Rd x IF2(RMS)
Reverse losses : P2 = VR x IR x (1 - )
Fig. C : TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 = +
V R x I RM
2
x (3 + 2 x S ) x F
VR
6 x dI F dt x I RM x I L x (S + 2 ) x F 2 x dI F dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
S = tb / ta
RECTIFIER OPERATION
Turn-off losses (in the diode) : P3 =
V R x I RM
2
xS xF
6 x dI F
dt
P3 and P5 are suitable for power MOSFET and IGBT
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APPLICATION DATA (Cont'd) Fig. D : TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
t
0 VF V Fp
1.1V F 0 tfr
VF t
PACKAGE MECHANICAL DATA SMB
E1
DIMENSIONS REF.
D
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
A1 A2 b
1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
E
c E
A1
E1
C L A2
D
b
L
FOOTPRINT DIMENSIONS (in millimeters)
2.3
1.52
2.75
1.52
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STTA106/U
PACKAGE MECHANICAL DATA DO-15
C
A
C
D
B
DIMENSIONS REF. Millimeters Min.
A B C D 6.05 2.95 26 0.71
Inches Min.
0.238 0.116 1.024 0.028
Max.
6.75 3.53 31 0.88
Max.
0.266 0.139 1.220 0.035
MARKING Type STTA106U STTA106 STTA106RL
s s
Marking T01 STTA106 STTA106
Package SMB DO-15 DO-15
Weight 0.1 g 0.4 g 0.4 g
Base Qty 2500 1000 6000
Delivery mode tape & reel Ammopack tape & reel
Band indicates cathode Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

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